DCX53-13
- Mfr.Part #
- DCX53-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89-3
- Stock
- 4,775
- In Stock :
- 4,775
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 14 Weeks
- hFE Min :
- 63
- Weight :
- 130.492855mg
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Width :
- 2.48mm
- Length :
- 4.5mm
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Power - Max :
- 1W
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Height :
- 1.5mm
- Case Connection :
- COLLECTOR
- Pin Count :
- 4
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 1W
- Base Part Number :
- DCX53
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2007
- Number of Terminations :
- 4
- Max Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transition Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 100V
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- Datasheets
- DCX53-13
DCX53-13 Documents

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
DCX53-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DCX53-13 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DCX53-13 Applications
There are a lot of Diodes Incorporated
DCX53-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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