DCX53-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Max Collector Current :

1A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

80V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

hFE Min :

63

Weight :

130.492855mg

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

80V

Radiation Hardening :

No

Width :

2.48mm

Length :

4.5mm

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Power - Max :

1W

Number of Pins :

4

Transistor Application :

SWITCHING

Height :

1.5mm

Case Connection :

COLLECTOR

Pin Count :

4

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Type :

PNP

Package / Case :

TO-243AA

Max Power Dissipation :

1W

Base Part Number :

DCX53

Transistor Element Material :

SILICON

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Emitter Base Voltage (VEBO) :

5V

Published :

2007

Number of Terminations :

4

Max Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transition Frequency :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

100V

Gain Bandwidth Product :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)