DCX53-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

200MHz

Terminal Position :

Dual

Height :

1.5mm

Base Part Number :

DCX53

Case Connection :

COLLECTOR

Number of Terminations :

4

Element Configuration :

Single

hFE Min :

63

Factory Lead Time :

14 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Transistor Type :

PNP

Weight :

130.492855mg

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Form :

Flat

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1W

Collector Base Voltage (VCBO) :

100V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

80V

Number of Pins :

4

Published :

2007

Package / Case :

TO-243AA

Time@Peak Reflow Temperature-Max (s) :

40

Width :

2.48mm

Emitter Base Voltage (VEBO) :

5V

Length :

4.5mm

Pin Count :

4

JESD-609 Code :

e3

Power - Max :

1W

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

PNP

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Breakdown Voltage :

80V

ECCN Code :

EAR99

Transition Frequency :

200MHz

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

80V

Current - Collector Cutoff (Max) :

100nA ICBO