DCX52-16-13
- Mfr.Part #
- DCX52-16-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT89-3
- Stock
- 21,931
- In Stock :
- 21,931
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Published :
- 2007
- Gain Bandwidth Product :
- 200MHz
- JESD-30 Code :
- R-PSSO-F3
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.5mm
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- Power - Max :
- 1W
- Package / Case :
- TO-243AA
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Length :
- 4.5mm
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Weight :
- 51.993025mg
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 1A
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transition Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2.48mm
- Factory Lead Time :
- 14 Weeks
- Case Connection :
- COLLECTOR
- hFE Min :
- 63
- Datasheets
- DCX52-16-13
DCX52-16-13 Documents

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
DCX52-16-13 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
DCX52-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DCX52-16-13 Applications
There are a lot of Diodes Incorporated
DCX52-16-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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