DCX52-16-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Pins :

4

Terminal Form :

Flat

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-F3

Package / Case :

TO-243AA

Width :

2.48mm

Pin Count :

4

Transistor Type :

PNP

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

1W

Collector Emitter Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Factory Lead Time :

14 Weeks

Case Connection :

COLLECTOR

Power - Max :

1W

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

60V

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

200MHz

Max Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

60V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Height :

1.5mm

hFE Min :

63

Length :

4.5mm

Gain Bandwidth Product :

200MHz

Weight :

51.993025mg

Published :

2007

Peak Reflow Temperature (Cel) :

260