DCX52-16-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

hFE Min :

63

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP

Terminal Form :

Flat

Polarity/Channel Type :

PNP

Published :

2007

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.5mm

Pin Count :

4

Max Collector Current :

1A

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1W

Radiation Hardening :

No

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Power - Max :

1W

Max Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Length :

4.5mm

Pbfree Code :

yes

Transition Frequency :

200MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

TO-243AA

Element Configuration :

Single

Number of Pins :

4

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

60V

Width :

2.48mm

JESD-30 Code :

R-PSSO-F3

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Weight :

51.993025mg

Gain Bandwidth Product :

200MHz

Collector Base Voltage (VCBO) :

60V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

60V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1