DCX52-16-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Published :

2007

Gain Bandwidth Product :

200MHz

JESD-30 Code :

R-PSSO-F3

Peak Reflow Temperature (Cel) :

260

Height :

1.5mm

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

60V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1W

Power - Max :

1W

Package / Case :

TO-243AA

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

60V

Length :

4.5mm

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

60V

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Radiation Hardening :

No

Mount :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Weight :

51.993025mg

Polarity/Channel Type :

PNP

Number of Pins :

4

Max Breakdown Voltage :

60V

Max Collector Current :

1A

Pbfree Code :

yes

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Transition Frequency :

200MHz

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Width :

2.48mm

Factory Lead Time :

14 Weeks

Case Connection :

COLLECTOR

hFE Min :

63