DCX53-16-13
- Mfr.Part #
- DCX53-16-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89-3
- Stock
- 2,000
- In Stock :
- 2,000
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.5mm
- Transistor Type :
- PNP
- Base Part Number :
- DCX53
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Length :
- 4.5mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Pin Count :
- 4
- Width :
- 2.48mm
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Flat
- Polarity/Channel Type :
- PNP
- Frequency :
- 200MHz
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2007
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transition Frequency :
- 200MHz
- Packaging :
- Cut Tape (CT)
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 14 Weeks
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 80V
- Weight :
- 51.993025mg
- Max Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -1V
- Datasheets
- DCX53-16-13

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
DCX53-16-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DCX53-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
DCX53-16-13 Applications
There are a lot of Diodes Incorporated
DCX53-16-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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