DCX56-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Transition Frequency :

200MHz

Max Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-243AA

Height :

1.5mm

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

80V

Number of Terminations :

4

Number of Pins :

4

Number of Elements :

1

Power - Max :

1W

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

100V

Emitter Base Voltage (VEBO) :

5V

Max Breakdown Voltage :

80V

Published :

2007

Factory Lead Time :

9 Weeks

hFE Min :

63

Gain Bandwidth Product :

200MHz

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Width :

2.48mm

Radiation Hardening :

No

Element Configuration :

Single

JESD-609 Code :

e3

Length :

4.5mm

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Flat

Max Collector Current :

1A

Weight :

51.993025mg

Pin Count :

4

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Base Part Number :

DCX56

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

80V

Case Connection :

COLLECTOR