DCX56-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Width :

2.48mm

Pin Count :

4

Max Collector Current :

1A

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Base Part Number :

DCX56

Number of Elements :

1

Package / Case :

TO-243AA

Terminal Finish :

Matte Tin (Sn)

Gain Bandwidth Product :

200MHz

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Max Power Dissipation :

1W

Element Configuration :

Single

Transition Frequency :

200MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

80V

Radiation Hardening :

No

Height :

1.5mm

Number of Terminations :

4

Transistor Element Material :

SILICON

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Weight :

51.993025mg

hFE Min :

63

Collector Emitter Breakdown Voltage :

80V

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

100V

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

40

Power - Max :

1W

Number of Pins :

4

Factory Lead Time :

9 Weeks

Mounting Type :

Surface Mount

Length :

4.5mm

Max Breakdown Voltage :

80V

Transistor Application :

SWITCHING

Published :

2007