CSD19538Q3AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Threshold Voltage :

3.2V

Power Dissipation-Max :

2.8W Ta 23W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4.9A

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

6 Weeks

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Width :

3.3mm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.8V @ 250μA

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Feedback Cap-Max (Crss) :

16.4 pF

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Thickness :

800μm

Number of Elements :

1

Mounting Type :

Surface Mount

Package / Case :

8-PowerVDFN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

454pF @ 50V

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

37A

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 10V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

100V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Continuous Drain Current (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Terminal Form :

Flat

Length :

3.3mm

Base Part Number :

CSD19538

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

JESD-609 Code :

e3

Series :

NexFET™

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 10V

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.072Ohm