CSD13303W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

6-UFBGA, DSBGA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

NexFET™

Power Dissipation-Max :

1.65W Ta

Rise Time :

10ns

Width :

1.8mm

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

HTS Code :

8541.29.00.95

Operating Mode :

0.85

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

12V

Rds On (Max) @ Id, Vgs :

20m Ω @ 1.5A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

31A Ta

Continuous Drain Current (ID) :

3.5A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Thickness :

2mm

Height :

1mm

ECCN Code :

EAR99

Terminal Form :

Ball

Turn On Delay Time :

4.6 ns

Mount :

Surface Mount

Number of Pins :

6

Element Configuration :

Single

Terminal Position :

BOTTOM

Factory Lead Time :

12 Weeks

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

715pF @ 6V

Turn-Off Delay Time :

14.7 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Pulsed Drain Current-Max (IDM) :

31A

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

Base Part Number :

CSD13303

Gate to Source Voltage (Vgs) :

8V

FET Type :

N-Channel

Length :

1.5mm

Fall Time (Typ) :

3.2 ns

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)