CSD13202Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Elements :

1

Thickness :

750μm

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 5A, 4.5V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Length :

2mm

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

20 mJ

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

JESD-609 Code :

e4

Width :

2mm

Turn On Delay Time :

4.5 ns

Turn-Off Delay Time :

11 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Pbfree Code :

yes

Power Dissipation :

2.7W

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Case Connection :

DRAIN

Fall Time (Typ) :

13.6 ns

Package / Case :

6-VDFN Exposed Pad

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

997pF @ 6V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

6

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.7W Ta

FET Type :

N-Channel

Rise Time :

28ns

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Number of Channels :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

800mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

22A

Base Part Number :

CSD13302

Operating Temperature :

-55°C~150°C TJ

Series :

NexFET™

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Breakdown Voltage :

12V

Number of Pins :

6

Element Configuration :

Single