CSD13202Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.7W Ta

Continuous Drain Current (ID) :

22A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Series :

NexFET™

Drain to Source Breakdown Voltage :

12V

Threshold Voltage :

800mV

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

997pF @ 6V

Case Connection :

DRAIN

Number of Pins :

6

Vgs (Max) :

±8V

Fall Time (Typ) :

13.6 ns

ECCN Code :

EAR99

JESD-609 Code :

e4

Power Dissipation :

2.7W

Base Part Number :

CSD13302

Rise Time :

28ns

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Terminal Position :

Dual

Package / Case :

6-VDFN Exposed Pad

Terminal Form :

NO LEAD

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 5A, 4.5V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Thickness :

750μm

Turn On Delay Time :

4.5 ns

Turn-Off Delay Time :

11 ns

Width :

2mm

Avalanche Energy Rating (Eas) :

20 mJ

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Number of Elements :

1

Contact Plating :

Tin

Length :

2mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED