CSD13302WT
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- Mfr.Part #
- CSD13302WT
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 1.6A 4DSBGA
- Stock
- 4,250
- In Stock ：
- 4,250
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 17.1m Ω @ 1A, 4.5V
- Mount :
- Surface Mount
- Base Part Number :
- CSD13302
- Length :
- 0m
- Pulsed Drain Current-Max (IDM) :
- 29A
- Height :
- 625μm
- Continuous Drain Current (ID) :
- 1.6A
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 7ns
- Factory Lead Time :
- 6 Weeks
- Thickness :
- 650μm
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 12V
- Vgs (Max) :
- ±10V
- Drain-source On Resistance-Max :
- 0.0285Ohm
- Series :
- NexFET™
- Feedback Cap-Max (Crss) :
- 196 pF
- Turn-Off Delay Time :
- 17 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- JESD-609 Code :
- e1
- Gate to Source Voltage (Vgs) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 12V
- Contact Plating :
- Copper, Silver, Tin
- Terminal Form :
- Ball
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 7 ns
- Number of Pins :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Additional Feature :
- ULTRA LOW RESISTANCE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Turn On Delay Time :
- 6 ns
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Width :
- 0m
- Package / Case :
- 4-UFBGA, DSBGA
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 4.5V
- Number of Elements :
- 1
- Number of Terminations :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 862pF @ 6V
- Power Dissipation-Max :
- 1.8W Ta
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- CSD13302WT
N-Channel Tape & Reel (TR) 17.1m Ω @ 1A, 4.5V ±10V 862pF @ 6V 7.8nC @ 4.5V 12V 4-UFBGA, DSBGA
CSD13302WT Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 862pF @ 6V.This device has a continuous drain current (ID) of [1.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 17 ns.A maximum pulsed drain current of 29A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 12V.In order to operate this transistor, a voltage of 12V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
CSD13302WT Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 17 ns
based on its rated peak drain current 29A.
a 12V drain to source voltage (Vdss)
CSD13302WT Applications
There are a lot of Texas Instruments
CSD13302WT applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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