CSD13201W10

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Contact Plating :

Copper, Silver, Tin

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

6 Weeks

Turn On Delay Time :

3.9 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

4-UFBGA, DSBGA

ECCN Code :

EAR99

Vgs (Max) :

±8V

Pulsed Drain Current-Max (IDM) :

20.2A

Power Dissipation-Max :

1.2W Ta

Packaging :

Tape and Reel (TR)

Height :

625μm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.053Ohm

Drain to Source Breakdown Voltage :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

462pF @ 6V

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

4

Thickness :

650μm

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Terminal Position :

BOTTOM

Series :

NexFET™

Rise Time :

5.9ns

Terminal Form :

Ball

Rds On (Max) @ Id, Vgs :

34m Ω @ 1A, 4.5V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

CSD13201

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Turn-Off Delay Time :

14.4 ns

JESD-609 Code :

e1

Fall Time (Typ) :

9.7 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Feedback Cap-Max (Crss) :

22.6 pF

Power Dissipation :

1.2W

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Width :

0m

Element Configuration :

Single

Length :

0m

Number of Channels :

1

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.6A

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ