CSD13201W10
- Mfr.Part #
- CSD13201W10
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 1.6A 4DSBGA
- Stock
- 1,083
- In Stock :
- 1,083
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 20.2A
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Gate to Source Voltage (Vgs) :
- 8V
- Thickness :
- 650μm
- Gate Charge (Qg) (Max) @ Vgs :
- 2.9nC @ 4.5V
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.053Ohm
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 14.4 ns
- Length :
- 0m
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Fall Time (Typ) :
- 9.7 ns
- Height :
- 625μm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Copper, Silver, Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Turn On Delay Time :
- 3.9 ns
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 0m
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Base Part Number :
- CSD13201
- Input Capacitance (Ciss) (Max) @ Vds :
- 462pF @ 6V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 5.9ns
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Power Dissipation :
- 1.2W
- Terminal Form :
- Ball
- Number of Channels :
- 1
- Series :
- NexFET™
- Number of Pins :
- 4
- Package / Case :
- 4-UFBGA, DSBGA
- Continuous Drain Current (ID) :
- 1.6A
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±8V
- Number of Terminations :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Lead Free :
- Lead Free
- Feedback Cap-Max (Crss) :
- 22.6 pF
- Power Dissipation-Max :
- 1.2W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 1A, 4.5V
- Drain to Source Breakdown Voltage :
- 12V
- Datasheets
- CSD13201W10

N-Channel Tape & Reel (TR) 34m Ω @ 1A, 4.5V ±8V 462pF @ 6V 2.9nC @ 4.5V 4-UFBGA, DSBGA
CSD13201W10 Description
CSD13201W10 emerges as a member of the family of N-channel NexFET? power MOSFET. It is able to provide ultra-low Qg and Qgd, as well as a gate-source voltage clamp. It is specifically designed to offer low on-state resistance and low gate charge in a low profile while ensuring good thermal characteristics.
CSD13201W10 Features
-
Extremely low Qg and Qgd
-
Small footprint 1mm × 1mm
-
Low profile 0.62mm height
-
Gate-source voltage clamp
-
Supplied in the 1 × 1 Wafer-level package
CSD13201W10 Applications
-
Load switch
-
Battery protection
-
Battery management
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