CSD13302W

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Turn On Delay Time :

6 ns

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Feedback Cap-Max (Crss) :

196 pF

Package / Case :

4-UFBGA, DSBGA

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Terminations :

4

Thickness :

650μm

Gate to Source Voltage (Vgs) :

10V

Element Configuration :

Single

Contact Plating :

Copper, Silver, Tin

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1.6A

Fall Time (Typ) :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

862pF @ 6V

DS Breakdown Voltage-Min :

12V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.8W Ta

Number of Pins :

4

Factory Lead Time :

6 Weeks

Height :

625μm

Drain-source On Resistance-Max :

0.0285Ohm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pulsed Drain Current-Max (IDM) :

29A

Rds On (Max) @ Id, Vgs :

17.1m Ω @ 1A, 4.5V

Transistor Element Material :

SILICON

Series :

NexFET™

Rise Time :

7ns

Drain to Source Voltage (Vdss) :

12V

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Form :

Ball

Length :

0m

JESD-609 Code :

e1

Base Part Number :

CSD13302

Width :

0m

Vgs (Max) :

±10V

Turn-Off Delay Time :

17 ns