CSD13302W
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- Mfr.Part #
- CSD13302W
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 1.6A 4DSBGA
- Stock
- 750
- In Stock ：
- 750
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Package / Case :
- 4-UFBGA, DSBGA
- Drain-source On Resistance-Max :
- 0.0285Ohm
- Continuous Drain Current (ID) :
- 1.6A
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 17 ns
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 29A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 12V
- Series :
- NexFET™
- Additional Feature :
- ULTRA LOW RESISTANCE
- Operating Temperature :
- -55°C~150°C TJ
- Feedback Cap-Max (Crss) :
- 196 pF
- Factory Lead Time :
- 6 Weeks
- Gate to Source Voltage (Vgs) :
- 10V
- Height :
- 625μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 7 ns
- Terminal Form :
- Ball
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 862pF @ 6V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Width :
- 0m
- Base Part Number :
- CSD13302
- Power Dissipation-Max :
- 1.8W Ta
- Length :
- 0m
- Rise Time :
- 7ns
- Mounting Type :
- Surface Mount
- Thickness :
- 650μm
- Turn On Delay Time :
- 6 ns
- Vgs (Max) :
- ±10V
- Terminal Position :
- BOTTOM
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 4.5V
- Number of Pins :
- 4
- JESD-609 Code :
- e1
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Silver, Tin
- Drain to Source Voltage (Vdss) :
- 12V
- Rds On (Max) @ Id, Vgs :
- 17.1m Ω @ 1A, 4.5V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Datasheets
- CSD13302W
N-Channel Tape & Reel (TR) 17.1m Ω @ 1A, 4.5V ±10V 862pF @ 6V 7.8nC @ 4.5V 12V 4-UFBGA, DSBGA
CSD13302W Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 862pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 29A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 12V to maintain normal operation.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
CSD13302W Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 17 ns
based on its rated peak drain current 29A.
a 12V drain to source voltage (Vdss)
CSD13302W Applications
There are a lot of Texas Instruments
CSD13302W applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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