CSD13302W
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- Mfr.Part #
- CSD13302W
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 1.6A 4DSBGA
- Stock
- 750
- In Stock ：
- 750
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- ULTRA LOW RESISTANCE
- Terminal Form :
- Ball
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Package / Case :
- 4-UFBGA, DSBGA
- Turn On Delay Time :
- 6 ns
- Rise Time :
- 7ns
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.0285Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Vgs (Max) :
- ±10V
- DS Breakdown Voltage-Min :
- 12V
- Base Part Number :
- CSD13302
- Height :
- 625μm
- Turn-Off Delay Time :
- 17 ns
- Rds On (Max) @ Id, Vgs :
- 17.1m Ω @ 1A, 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Feedback Cap-Max (Crss) :
- 196 pF
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 0m
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Series :
- NexFET™
- Fall Time (Typ) :
- 7 ns
- Contact Plating :
- Copper, Silver, Tin
- JESD-609 Code :
- e1
- Factory Lead Time :
- 6 Weeks
- Drain to Source Voltage (Vdss) :
- 12V
- Pulsed Drain Current-Max (IDM) :
- 29A
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 862pF @ 6V
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Continuous Drain Current (ID) :
- 1.6A
- Power Dissipation-Max :
- 1.8W Ta
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Length :
- 0m
- Thickness :
- 650μm
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Datasheets
- CSD13302W
N-Channel Tape & Reel (TR) 17.1m Ω @ 1A, 4.5V ±10V 862pF @ 6V 7.8nC @ 4.5V 12V 4-UFBGA, DSBGA
CSD13302W Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 862pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 29A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 12V to maintain normal operation.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
CSD13302W Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 17 ns
based on its rated peak drain current 29A.
a 12V drain to source voltage (Vdss)
CSD13302W Applications
There are a lot of Texas Instruments
CSD13302W applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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