CSD13302W
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- Mfr.Part #
- CSD13302W
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 1.6A 4DSBGA
- Stock
- 750
- In Stock ：
- 750
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 625μm
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 17 ns
- Base Part Number :
- CSD13302
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Length :
- 0m
- Input Capacitance (Ciss) (Max) @ Vds :
- 862pF @ 6V
- Continuous Drain Current (ID) :
- 1.6A
- Width :
- 0m
- Rise Time :
- 7ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- Turn On Delay Time :
- 6 ns
- Number of Pins :
- 4
- Thickness :
- 650μm
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Series :
- NexFET™
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Fall Time (Typ) :
- 7 ns
- Rds On (Max) @ Id, Vgs :
- 17.1m Ω @ 1A, 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Terminal Form :
- Ball
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 10V
- Contact Plating :
- Copper, Silver, Tin
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Element Configuration :
- Single
- Power Dissipation-Max :
- 1.8W Ta
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 12V
- Vgs (Max) :
- ±10V
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Package / Case :
- 4-UFBGA, DSBGA
- Drain to Source Voltage (Vdss) :
- 12V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 4.5V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Feedback Cap-Max (Crss) :
- 196 pF
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Pulsed Drain Current-Max (IDM) :
- 29A
- Drain-source On Resistance-Max :
- 0.0285Ohm
- Additional Feature :
- ULTRA LOW RESISTANCE
- Datasheets
- CSD13302W
N-Channel Tape & Reel (TR) 17.1m Ω @ 1A, 4.5V ±10V 862pF @ 6V 7.8nC @ 4.5V 12V 4-UFBGA, DSBGA
CSD13302W Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 862pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 29A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 12V to maintain normal operation.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
CSD13302W Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 17 ns
based on its rated peak drain current 29A.
a 12V drain to source voltage (Vdss)
CSD13302W Applications
There are a lot of Texas Instruments
CSD13302W applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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