CSD19538Q3A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

3.8V @ 250μA

Number of Elements :

1

Package / Case :

8-PowerVDFN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

15A

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

37A

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 10V

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

454pF @ 50V

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 10V

Number of Pins :

8

Lead Free :

Lead Free

Case Connection :

DRAIN

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

DS Breakdown Voltage-Min :

100V

Width :

3.3mm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Series :

NexFET™

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4.9A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Length :

3.3mm

Power Dissipation-Max :

2.8W Ta 23W Tc

Terminal Position :

Dual

Base Part Number :

CSD19538

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Number of Terminations :

5

Drain-source On Resistance-Max :

0.072Ohm

Mount :

Surface Mount

Thickness :

800μm

Feedback Cap-Max (Crss) :

16.4 pF