CSD19538Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

6

Threshold Voltage :

3.2V

Operating Mode :

ENHANCEMENT MODE

Thickness :

750μm

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

13.1A Tc

Pbfree Code :

yes

Terminal Form :

NO LEAD

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

JESD-609 Code :

e3

Series :

NexFET™

Input Capacitance (Ciss) (Max) @ Vds :

454pF @ 50V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Width :

2mm

Vgs(th) (Max) @ Id :

3.8V @ 250μA

Case Connection :

DRAIN

Number of Elements :

1

Mount :

Surface Mount

Package / Case :

6-WDFN Exposed Pad

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pulsed Drain Current-Max (IDM) :

34.4A

Continuous Drain Current (ID) :

13.1A

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.5W Ta 20.2W Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

8 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Base Part Number :

CSD19538

Additional Feature :

AVALANCHE RATED

Number of Terminations :

6

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.072Ohm

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 10V

Operating Temperature :

-55°C~150°C TJ

Length :

2mm