CSD19538Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14.4A Ta

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Thickness :

750μm

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Number of Elements :

1

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.8V @ 250μA

Vgs (Max) :

±20V

Base Part Number :

CSD19538

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

6

Terminal Position :

Dual

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

34.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Series :

NexFET™

Lead Free :

Lead Free

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Width :

2mm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

454pF @ 50V

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Length :

2mm

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Package / Case :

6-WDFN Exposed Pad

Avalanche Energy Rating (Eas) :

8 mJ

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

100V

JESD-609 Code :

e4

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

14.4A

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 20.2W Tc

Drain-source On Resistance-Max :

0.072Ohm