CSD19537Q3T
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- Mfr.Part #
- CSD19537Q3T
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 50A 8VSON
- Stock
- 328,564
- In Stock ：
- 328,564
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 5 ns
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Contact Plating :
- Copper, Tin
- Rise Time :
- 3ns
- Thickness :
- 1mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Form :
- NO LEAD
- Width :
- 3.3mm
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 9.7A
- Pulsed Drain Current-Max (IDM) :
- 219A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 2.8W Ta 83W Tc
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Series :
- NexFET™
- Vgs(th) (Max) @ Id :
- 3.6V @ 250µA
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 14.5m Ω @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Ta
- Threshold Voltage :
- 3V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1680pF @ 50V
- JESD-609 Code :
- e3
- Number of Terminations :
- 5
- Base Part Number :
- CSD19537
- Mounting Type :
- Surface Mount
- Feedback Cap-Max (Crss) :
- 17.3 pF
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- DS Breakdown Voltage-Min :
- 100V
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 100V
- Lead Free :
- Contains Lead
- Factory Lead Time :
- 6 Weeks
- Resistance :
- 12.1mOhm
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerVDFN
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 3 ns
- Continuous Drain Current (ID) :
- 50A
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.3mm
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Turn-Off Delay Time :
- 10 ns
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- not_compliant
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Datasheets
- CSD19537Q3T
N-Channel Tape & Reel (TR) 14.5m Ω @ 10A, 10V ±20V 1680pF @ 50V 21nC @ 10V 100V 8-PowerVDFN
CSD19537Q3T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 55 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1680pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.A device can conduct a maximum continuous current of [9.7A] according to its drain current.It is [10 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 219A.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
CSD19537Q3T Features
the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 10 ns
based on its rated peak drain current 219A.
a threshold voltage of 3V
a 100V drain to source voltage (Vdss)
CSD19537Q3T Applications
There are a lot of Texas Instruments
CSD19537Q3T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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