CSD19537Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 10A, 10V

Contact Plating :

Copper, Tin

Number of Elements :

1

Thickness :

1mm

Turn-Off Delay Time :

10 ns

Width :

3.3mm

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Power Dissipation-Max :

2.8W Ta 83W Tc

Pbfree Code :

yes

Number of Pins :

8

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

55 mJ

Height :

1.1mm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

9.7A

Factory Lead Time :

6 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 50V

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Max Junction Temperature (Tj) :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Threshold Voltage :

3V

Rise Time :

3ns

Series :

NexFET™

ECCN Code :

EAR99

Terminal Position :

Dual

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Fall Time (Typ) :

3 ns

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Length :

3.3mm

Power Dissipation :

2.8W

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Base Part Number :

CSD19537

FET Type :

N-Channel

Package / Case :

8-PowerVDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5 ns

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON