CSD19536KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

150A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

806 mJ

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Rise Time :

8ns

Vgs (Max) :

±20V

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Width :

8.7mm

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Power Dissipation-Max :

375W Tc

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

14 ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Elements :

1

Package / Case :

TO-220-3

Series :

NexFET™

Length :

10.16mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

FET Type :

N-Channel

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

Pulsed Drain Current-Max (IDM) :

400A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Thickness :

4.58mm

Fall Time (Typ) :

5 ns

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Contact Plating :

Tin

Height :

4.7mm

Threshold Voltage :

2.5V

Turn-Off Delay Time :

38 ns

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

150A

Base Part Number :

CSD19536

Mounting Type :

Through Hole

Number of Terminations :

3

Number of Pins :

3