CSD19535KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Additional Feature :

AVALANCHE RATED

Height :

4.83mm

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Terminations :

2

Power Dissipation-Max :

300W Tc

Mount :

Surface Mount

Vgs (Max) :

±20V

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Width :

8.41mm

RoHS Status :

ROHS3 Compliant

Length :

10.18mm

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

15 ns

Turn-Off Delay Time :

21 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Thickness :

4.44mm

Continuous Drain Current (ID) :

200A

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0041Ohm

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Input Capacitance (Ciss) (Max) @ Vds :

7930pF @ 50V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

CSD19535

Vgs(th) (Max) @ Id :

3.4V @ 250μA

DS Breakdown Voltage-Min :

100V

Rise Time :

18ns

Avalanche Energy Rating (Eas) :

451 mJ

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V