CSD19535KCS
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- Mfr.Part #
- CSD19535KCS
- Manufacturer
- Texas Instruments
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 150A TO220-3
- Stock
- 5,300
- In Stock ：
- 5,300
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.4V @ 250μA
- Reach Compliance Code :
- not_compliant
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- 2.7V
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-220-3
- Series :
- NexFET™
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.0044Ohm
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 101nC @ 10V
- Turn-Off Delay Time :
- 60 ns
- Length :
- 10.16mm
- Rise Time :
- 15ns
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 150A Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 32 ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Mount :
- Through Hole
- Width :
- 8.7mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- CSD19535
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 5 ns
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Height :
- 4.7mm
- Drain to Source Breakdown Voltage :
- 100V
- Continuous Drain Current (ID) :
- 150A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300W
- Pulsed Drain Current-Max (IDM) :
- 400A
- Contact Plating :
- Tin
- Weight :
- 6.000006g
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 100A, 10V
- Transistor Element Material :
- SILICON
- Thickness :
- 4.58mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 7930pF @ 50V
- Datasheets
- CSD19535KCS
N-Channel Tube 3.6m Ω @ 100A, 10V ±20V 7930pF @ 50V 101nC @ 10V TO-220-3
CSD19535KCS Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7930pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.7V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
CSD19535KCS Features
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 400A.
a threshold voltage of 2.7V
CSD19535KCS Applications
There are a lot of Texas Instruments
CSD19535KCS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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