CSD19534Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Weight :

24.012046mg

Contact Plating :

Tin

Power Dissipation :

3.2W

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

50A Ta

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

15.1m Ω @ 10A, 10V

Width :

6mm

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

3.2W Ta 63W Tc

Feedback Cap-Max (Crss) :

7.4 pF

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

4.9mm

Series :

NexFET™

Turn On Delay Time :

9 ns

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

55 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Base Part Number :

CSD19534

Continuous Drain Current (ID) :

44A

JESD-609 Code :

e3

Threshold Voltage :

2.8V

Lead Free :

Contains Lead

Terminal Position :

Dual

REACH SVHC :

No SVHC

Height :

1.1mm

Vgs(th) (Max) @ Id :

3.4V @ 250μA

FET Type :

N-Channel

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Turn-Off Delay Time :

20 ns

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

Number of Pins :

8

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Rise Time :

14ns

Vgs (Max) :

±20V

Thickness :

1mm