CSD19534Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

10A

Factory Lead Time :

6 Weeks

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Height :

1.1mm

Drain to Source Breakdown Voltage :

100V

Terminal Form :

NO LEAD

Number of Pins :

8

Contact Plating :

Tin

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

9 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Number of Elements :

1

Power Dissipation-Max :

3.2W Ta 63W Tc

Current - Continuous Drain (Id) @ 25°C :

50A Ta

Number of Channels :

1

FET Type :

N-Channel

Transistor Application :

SWITCHING

Package / Case :

8-PowerTDFN

Fall Time (Typ) :

6 ns

Rds On (Max) @ Id, Vgs :

15.1m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Width :

6mm

Feedback Cap-Max (Crss) :

7.4 pF

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Rise Time :

14ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

AVALANCHE RATED

Power Dissipation :

3.2W

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Case Connection :

DRAIN

Length :

4.9mm

Avalanche Energy Rating (Eas) :

55 mJ

Number of Terminations :

5

ECCN Code :

EAR99

Base Part Number :

CSD19534

RoHS Status :

ROHS3 Compliant

Thickness :

1mm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Position :

Dual