CSD19534KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

22.2nC @ 10V

DS Breakdown Voltage-Min :

100V

Gate to Source Voltage (Vgs) :

20V

Length :

10.16mm

Thickness :

4.58mm

Threshold Voltage :

2.8V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Height :

4.7mm

Turn-Off Delay Time :

9 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.02Ohm

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pbfree Code :

yes

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Contact Plating :

Tin

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Vgs (Max) :

±20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

Feedback Cap-Max (Crss) :

7.4 pF

Power Dissipation-Max :

118W Tc

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 30A, 10V

Element Configuration :

Single

Base Part Number :

CSD19534

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1670pF @ 50V

Fall Time (Typ) :

1 ns

Rise Time :

2ns

Width :

8.7mm

Turn On Delay Time :

6 ns

REACH SVHC :

No SVHC

Number of Elements :

1

Packaging :

Tube

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

54 mJ

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ