CSD19533Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

CSD19533

Contact Plating :

Tin

Power Dissipation-Max :

3.2W Ta 96W Tc

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

5 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Case Connection :

DRAIN

Number of Elements :

1

Continuous Drain Current (ID) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 50V

Terminal Form :

NO LEAD

Drain-source On Resistance-Max :

0.0111Ohm

Turn-Off Delay Time :

16 ns

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Feedback Cap-Max (Crss) :

12.5 pF

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Pulsed Drain Current-Max (IDM) :

231A

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Terminations :

5

Vgs (Max) :

±20V

Terminal Position :

Dual

Turn On Delay Time :

6 ns

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

4.9mm

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

13A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Thickness :

1mm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 13A, 10V

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Rise Time :

6ns

Width :

6mm

Series :

NexFET™

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Avalanche Energy Rating (Eas) :

106 mJ