CSD19533Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Additional Feature :

AVALANCHE RATED

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Element Configuration :

Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 13A, 10V

Threshold Voltage :

2.8V

FET Type :

N-Channel

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Number of Channels :

1

Base Part Number :

CSD19533

Height :

1.1mm

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

16 ns

Thickness :

1mm

Vgs(th) (Max) @ Id :

3.4V @ 250μA

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6 ns

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 50V

Terminal Position :

Dual

Continuous Drain Current (ID) :

13A

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Series :

NexFET™

JESD-609 Code :

e3

Rise Time :

6ns

Power Dissipation :

3.2W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Length :

4.9mm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3.2W Ta 96W Tc

Number of Pins :

8

Fall Time (Typ) :

5 ns

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Width :

6mm

Contact Plating :

Tin

Package / Case :

8-PowerTDFN

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)