CSD19533KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 55A, 10V

Length :

10.16mm

Number of Terminations :

3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

7 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

CSD19533

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 50V

Reach Compliance Code :

not_compliant

Height :

4.7mm

Pbfree Code :

yes

Number of Channels :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

12 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Factory Lead Time :

6 Weeks

Case Connection :

DRAIN

Rise Time :

5ns

Mount :

Through Hole

Continuous Drain Current (ID) :

100A

Drain to Source Breakdown Voltage :

100V

Weight :

6.000006g

Element Configuration :

Single

Number of Pins :

3

Power Dissipation-Max :

188W Tc

Mounting Type :

Through Hole

JESD-609 Code :

e3

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Thickness :

4.58mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Width :

8.7mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

2 ns

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Threshold Voltage :

2.8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Series :

NexFET™

Pulsed Drain Current-Max (IDM) :

207A

Package / Case :

TO-220-3

Vgs (Max) :

±20V