CSD19533KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Package / Case :

TO-220-3

Length :

10.16mm

Pbfree Code :

yes

Case Connection :

DRAIN

Mounting Type :

Through Hole

Base Part Number :

CSD19533

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 50V

Number of Terminations :

3

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Thickness :

4.58mm

ECCN Code :

EAR99

Turn On Delay Time :

7 ns

Transistor Application :

SWITCHING

Series :

NexFET™

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

6.000006g

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Rise Time :

5ns

Turn-Off Delay Time :

12 ns

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

188W Tc

Number of Channels :

1

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pulsed Drain Current-Max (IDM) :

207A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Lead Free :

Lead Free

Number of Elements :

1

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 55A, 10V

Width :

8.7mm

Number of Pins :

3

Height :

4.7mm

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

2 ns

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Threshold Voltage :

2.8V