CSD19532Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Case Connection :

DRAIN

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rise Time :

6ns

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

4810pF @ 50V

Power Dissipation-Max :

3.1W Ta 195W Tc

Turn-Off Delay Time :

22 ns

Drain-source On Resistance-Max :

0.0057Ohm

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

400A

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Threshold Voltage :

2.6V

Width :

6mm

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Peak Reflow Temperature (Cel) :

260

Base Part Number :

CSD19532

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Height :

1.05mm

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Power Dissipation :

3.1W

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

ECCN Code :

EAR99

Fall Time (Typ) :

6 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Series :

NexFET™

Length :

5mm

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

274 mJ

Continuous Drain Current (ID) :

100A

Element Configuration :

Single

Turn On Delay Time :

7 ns

Thickness :

950μm

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 17A, 10V

Mounting Type :

Surface Mount

Number of Elements :

1

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Max Junction Temperature (Tj) :

150°C