CSD19532KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Case Connection :

DRAIN

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0066Ohm

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

259 mJ

Power Dissipation-Max :

250W Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

18 pF

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Mount :

Surface Mount

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Base Part Number :

CSD19532

Input Capacitance (Ciss) (Max) @ Vds :

5060pF @ 50V

Factory Lead Time :

12 Weeks

Element Configuration :

Single

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Height :

4.83mm

FET Type :

N-Channel

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Width :

8.41mm

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 90A, 10V

Series :

NexFET™

Pulsed Drain Current-Max (IDM) :

400A

Continuous Drain Current (ID) :

200A

Thickness :

4.44mm

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Lead Free :

Contains Lead

Length :

10.18mm

Number of Elements :

1

Additional Feature :

AVALANCHE RATED