CSD19532KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Base Part Number :

CSD19532

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Length :

10.18mm

Avalanche Energy Rating (Eas) :

259 mJ

Transistor Element Material :

SILICON

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Mount :

Surface Mount

Series :

NexFET™

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5060pF @ 50V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Feedback Cap-Max (Crss) :

18 pF

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

100V

Thickness :

4.44mm

Power Dissipation-Max :

250W Tc

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Peak Reflow Temperature (Cel) :

260

Width :

8.41mm

Continuous Drain Current (ID) :

200A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 90A, 10V

Drain-source On Resistance-Max :

0.0066Ohm

Height :

4.83mm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Number of Terminations :

2

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead