CSD19532KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Turn-Off Delay Time :

14 ns

Drain to Source Voltage (Vdss) :

100V

Gate to Source Voltage (Vgs) :

20V

Width :

8.41mm

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

18 pF

Number of Terminations :

2

Number of Elements :

1

Base Part Number :

CSD19532

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Continuous Drain Current (ID) :

200A

Vgs (Max) :

±20V

Mount :

Surface Mount

Series :

NexFET™

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Transistor Application :

SWITCHING

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

DS Breakdown Voltage-Min :

100V

Avalanche Energy Rating (Eas) :

259 mJ

Number of Pins :

3

FET Type :

N-Channel

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Thickness :

4.44mm

Pulsed Drain Current-Max (IDM) :

400A

Height :

4.83mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5060pF @ 50V

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.0066Ohm

Case Connection :

DRAIN

Fall Time (Typ) :

2 ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Power Dissipation-Max :

250W Tc

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 90A, 10V

Length :

10.18mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Rise Time :

3ns

Turn On Delay Time :

9 ns

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free