CSD19531Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 16A, 10V

Terminal Form :

NO LEAD

Pulsed Drain Current-Max (IDM) :

337A

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

3870pF @ 50V

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

3.3W Ta 125W Tc

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Lead Free :

Contains Lead

Pbfree Code :

yes

Transistor Element Material :

SILICON

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Case Connection :

DRAIN

Fall Time (Typ) :

5.2 ns

Width :

6mm

Length :

4.9mm

Vgs(th) (Max) @ Id :

3.3V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Continuous Drain Current (ID) :

100A

Series :

NexFET™

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Thickness :

1mm

Transistor Application :

SWITCHING

Terminal Position :

Dual

Turn On Delay Time :

6 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Base Part Number :

CSD19531

Height :

1.1mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Threshold Voltage :

2.7V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Number of Terminations :

5

Contact Plating :

Tin

Turn-Off Delay Time :

18.4 ns

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Rise Time :

5.8ns