CSD19531Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Threshold Voltage :

2.7V

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

3.3V @ 250μA

Drain to Source Breakdown Voltage :

100V

Additional Feature :

AVALANCHE RATED

Series :

NexFET™

Number of Pins :

8

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Length :

4.9mm

Power Dissipation-Max :

3.3W Ta 125W Tc

Turn-Off Delay Time :

18.4 ns

JESD-609 Code :

e3

Contact Plating :

Tin

Terminal Position :

Dual

Number of Elements :

1

Turn On Delay Time :

6 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6mm

Fall Time (Typ) :

5.2 ns

Factory Lead Time :

12 Weeks

Terminal Form :

NO LEAD

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Vgs (Max) :

±20V

Element Configuration :

Single

Case Connection :

DRAIN

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

337A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

CSD19531

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Rise Time :

5.8ns

Thickness :

1mm

Continuous Drain Current (ID) :

100A

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 16A, 10V

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3870pF @ 50V