CSD19506KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Case Connection :

DRAIN

Number of Terminations :

3

Continuous Drain Current (ID) :

200A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Series :

NexFET™

Factory Lead Time :

6 Weeks

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Vgs (Max) :

±20V

Number of Pins :

3

Terminal Form :

Gull wing

Number of Elements :

1

Feedback Cap-Max (Crss) :

55 pF

FET Type :

N-Channel

Transistor Application :

SWITCHING

Height :

4.83mm

Operating Temperature :

-55°C~175°C TJ

Length :

10.18mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

80V

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

400A

Input Capacitance (Ciss) (Max) @ Vds :

12200pF @ 40V

Width :

8.41mm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

375W Tc

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

260

Thickness :

4.44mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Base Part Number :

CSD19506

DS Breakdown Voltage-Min :

80V

Drain-source On Resistance-Max :

0.0028Ohm

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Mount :

Surface Mount