CSD19506KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

12200pF @ 40V

Vgs (Max) :

±20V

Width :

8.41mm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Drain to Source Voltage (Vdss) :

80V

Base Part Number :

CSD19506

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Reach Compliance Code :

not_compliant

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Series :

NexFET™

Length :

10.18mm

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Continuous Drain Current (ID) :

200A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Pins :

3

Height :

4.83mm

Thickness :

4.44mm

Feedback Cap-Max (Crss) :

55 pF

FET Type :

N-Channel

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Power Dissipation-Max :

375W Tc

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

400A

Drain-source On Resistance-Max :

0.0028Ohm

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

80V

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Case Connection :

DRAIN