CSD19506KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Series :

NexFET™

Number of Elements :

1

Length :

10.18mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

12200pF @ 40V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

80V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Continuous Drain Current (ID) :

200A

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Factory Lead Time :

6 Weeks

Feedback Cap-Max (Crss) :

55 pF

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

2 (1 Year)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

400A

Width :

8.41mm

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0028Ohm

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Height :

4.83mm

Packaging :

Tape and Reel (TR)

Thickness :

4.44mm

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Base Part Number :

CSD19506

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Element Configuration :

Single

DS Breakdown Voltage-Min :

80V

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Power Dissipation-Max :

375W Tc