CSD19506KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Ta

REACH SVHC :

No SVHC

Number of Channels :

1

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Factory Lead Time :

6 Weeks

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Operating Temperature :

-55°C~175°C TJ

Length :

10.16mm

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.0028Ohm

Pbfree Code :

yes

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Threshold Voltage :

2.5V

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Base Part Number :

CSD19506

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Continuous Drain Current (ID) :

273A

Mount :

Through Hole

Fall Time (Typ) :

10 ns

Weight :

6.000006g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Power Dissipation-Max :

375W Tc

Packaging :

Tube

Mounting Type :

Through Hole

Pin Count :

3

Turn-Off Delay Time :

30 ns

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

80V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

12200pF @ 40V

Turn On Delay Time :

19 ns

Width :

8.7mm

Feedback Cap-Max (Crss) :

55 pF

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Thickness :

4.58mm

Height :

4.7mm

Element Configuration :

Single

Series :

NexFET™

Drain to Source Voltage (Vdss) :

80V

RoHS Status :

ROHS3 Compliant

Rise Time :

11ns

Vgs (Max) :

±20V