CSD19505KTT
- Mfr.Part #
- CSD19505KTT
- Manufacturer
- Texas Instruments
- Package / Case
- TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 200A DDPAK
- Stock
- 3,783
- In Stock :
- 3,783
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 200A
- Input Capacitance (Ciss) (Max) @ Vds :
- 7920pF @ 40V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 2.6V
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3.2V @ 250μA
- Avalanche Energy Rating (Eas) :
- 510 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 12 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 76nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 4.83mm
- Power Dissipation-Max :
- 300W Tc
- DS Breakdown Voltage-Min :
- 80V
- Rds On (Max) @ Id, Vgs :
- 3.1m Ω @ 100A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Series :
- NexFET™
- Thickness :
- 4.44mm
- Drain to Source Voltage (Vdss) :
- 80V
- Length :
- 10.18mm
- Vgs (Max) :
- ±20V
- Base Part Number :
- CSD19505
- Current - Continuous Drain (Id) @ 25°C :
- 200A Ta
- Width :
- 8.41mm
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Contains Lead
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Datasheets
- CSD19505KTT

N-Channel Tape & Reel (TR) 3.1m Ω @ 100A, 10V ±20V 7920pF @ 40V 76nC @ 10V 80V TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
CSD19505KTT Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 510 mJ.A device's maximal input capacitance is 7920pF @ 40V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2.6V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 80V.This transistor requires a 80V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).
CSD19505KTT Features
the avalanche energy rating (Eas) is 510 mJ
a continuous drain current (ID) of 200A
based on its rated peak drain current 400A.
a threshold voltage of 2.6V
a 80V drain to source voltage (Vdss)
CSD19505KTT Applications
There are a lot of Texas Instruments
CSD19505KTT applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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