CSD19503KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

2 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.7mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain Current-Max (Abs) (ID) :

94A

Number of Pins :

3

Element Configuration :

Single

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Rise Time :

3ns

Base Part Number :

CSD19503

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Factory Lead Time :

6 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

80V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

11 ns

Thickness :

4.58mm

Turn On Delay Time :

7 ns

Pulsed Drain Current-Max (IDM) :

247A

Rds On (Max) @ Id, Vgs :

9.2m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 40V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Continuous Drain Current (ID) :

100A

Package / Case :

TO-220-3

Threshold Voltage :

2.8V

Power Dissipation :

188W

Number of Channels :

1

Width :

8.7mm

Contact Plating :

Tin

Weight :

6.000006g

Number of Terminations :

3

Pbfree Code :

yes

Series :

NexFET™

Mount :

Through Hole

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Length :

10.16mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Power Dissipation-Max :

188W Tc

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

FET Type :

N-Channel

DS Breakdown Voltage-Min :

80V