CSD19502Q5BT
- Mfr.Part #
- CSD19502Q5BT
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 100A 8VSON
- Stock
- 163,021
- In Stock :
- 163,021
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 100A
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 6mm
- Length :
- 5mm
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Threshold Voltage :
- 2.7V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4870pF @ 40V
- Package / Case :
- 8-PowerTDFN
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 3.3V @ 250μA
- Drain to Source Voltage (Vdss) :
- 80V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 274 mJ
- Rds On (Max) @ Id, Vgs :
- 4.1m Ω @ 19A, 10V
- Case Connection :
- DRAIN
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 17A
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Terminal Form :
- NO LEAD
- Series :
- NexFET™
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 5
- Reach Compliance Code :
- not_compliant
- Thickness :
- 950μm
- Factory Lead Time :
- 6 Weeks
- Pulsed Drain Current-Max (IDM) :
- 400A
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Base Part Number :
- CSD19502
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation-Max :
- 3.1W Ta 195W Tc
- Feedback Cap-Max (Crss) :
- 22 pF
- Lead Free :
- Contains Lead
- Datasheets
- CSD19502Q5BT

N-Channel Tape & Reel (TR) 4.1m Ω @ 19A, 10V ±20V 4870pF @ 40V 62nC @ 10V 80V 8-PowerTDFN
CSD19502Q5BT Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 274 mJ.A device's maximal input capacitance is 4870pF @ 40V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain current is 17A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2.7V threshold voltage.This transistor requires a 80V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).
CSD19502Q5BT Features
the avalanche energy rating (Eas) is 274 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.
a threshold voltage of 2.7V
a 80V drain to source voltage (Vdss)
CSD19502Q5BT Applications
There are a lot of Texas Instruments
CSD19502Q5BT applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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