CSD19502Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rise Time :

6ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Drain to Source Breakdown Voltage :

80V

Power Dissipation-Max :

3.1W Ta 195W Tc

Number of Channels :

1

Lead Free :

Contains Lead

Base Part Number :

CSD19502

Vgs(th) (Max) @ Id :

3.3V @ 250μA

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Number of Terminations :

5

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Length :

5mm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Transistor Application :

SWITCHING

Fall Time (Typ) :

7 ns

Thickness :

950μm

Factory Lead Time :

6 Weeks

Turn On Delay Time :

8 ns

Number of Pins :

8

Width :

6mm

Pbfree Code :

yes

Feedback Cap-Max (Crss) :

22 pF

Series :

NexFET™

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

Transistor Element Material :

SILICON

Turn-Off Delay Time :

22 ns

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

100A

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

274 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 19A, 10V

Threshold Voltage :

2.7V

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Power Dissipation :

3.2W

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4870pF @ 40V