CSD19501KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Fall Time (Typ) :

5 ns

Number of Pins :

3

Factory Lead Time :

16 Weeks

Width :

8.7mm

Drain-source On Resistance-Max :

0.0079Ohm

Length :

10.16mm

Base Part Number :

CSD19501

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Pbfree Code :

yes

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Drain to Source Breakdown Voltage :

80V

Height :

4.7mm

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

100A

Weight :

6.000006g

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 60A, 10V

Vgs (Max) :

±20V

Turn-Off Delay Time :

39 ns

Case Connection :

DRAIN

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Power Dissipation-Max :

217W Tc

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Transistor Application :

SWITCHING

Thickness :

4.58mm

Turn On Delay Time :

21 ns

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rise Time :

15ns

REACH SVHC :

No SVHC

Number of Channels :

1

Packaging :

Tube

Package / Case :

TO-220-3

JESD-609 Code :

e3

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.6V

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 40V

Series :

NexFET™

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Reach Compliance Code :

not_compliant