CSD18563Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Power Dissipation-Max :

3.2W Ta 116W Tc

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Power Dissipation :

3.2W

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Package / Case :

8-PowerTDFN

Continuous Drain Current (ID) :

15A

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 18A, 10V

Turn On Delay Time :

3.2 ns

Rise Time :

6.3ns

JESD-609 Code :

e3

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Base Part Number :

CSD18563

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

93A

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Width :

6mm

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Position :

Dual

Element Configuration :

Single

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Thickness :

1mm

Drain to Source Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

2 V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Length :

4.9mm

Series :

NexFET™

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Number of Channels :

1

Turn-Off Delay Time :

11.4 ns

Number of Pins :

8

Fall Time (Typ) :

1.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Height :

1.1mm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

96A

Threshold Voltage :

2V

Number of Terminations :

5