CSD18543Q3AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

55 mJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Width :

3.3mm

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Height :

900μm

Turn-Off Delay Time :

8 ns

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Series :

NexFET™

Mounting Type :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerVDFN

Max Junction Temperature (Tj) :

150°C

Transistor Application :

SWITCHING

Number of Channels :

1

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

6 Weeks

Feedback Cap-Max (Crss) :

6.2 pF

Vgs (Max) :

±20V

Power Dissipation :

2.8W

Current - Continuous Drain (Id) @ 25°C :

12A Ta 60A Tc

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Thickness :

800μm

Number of Terminations :

5

Continuous Drain Current (ID) :

12A

Length :

3.3mm

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

66W Tc

Rds On (Max) @ Id, Vgs :

15.6m Ω @ 12A, 4.5V

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 30V

JESD-609 Code :

e3

Terminal Position :

Dual

Base Part Number :

CSD18543

Turn On Delay Time :

9 ns

Element Configuration :

Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8