CSD18543Q3AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

8 ns

Base Part Number :

CSD18543

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

12A Ta 60A Tc

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Series :

NexFET™

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Avalanche Energy Rating (Eas) :

55 mJ

Width :

3.3mm

Height :

900μm

Case Connection :

DRAIN

Number of Terminations :

5

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Length :

3.3mm

Feedback Cap-Max (Crss) :

6.2 pF

Power Dissipation :

2.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Package / Case :

8-PowerVDFN

Vgs (Max) :

±20V

Terminal Position :

Dual

Power Dissipation-Max :

66W Tc

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Number of Channels :

1

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 30V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Continuous Drain Current (ID) :

12A

Thickness :

800μm

Rds On (Max) @ Id, Vgs :

15.6m Ω @ 12A, 4.5V

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Turn On Delay Time :

9 ns