CSD18542KTTT
- Mfr.Part #
- CSD18542KTTT
- Manufacturer
- Texas Instruments
- Package / Case
- TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200A/170A DDPAK
- Stock
- 8,466
- In Stock :
- 8,466
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 281 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 200A Ta 170A Tc
- Thickness :
- 4.44mm
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 200A
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 100A, 10V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 400A
- Threshold Voltage :
- 1.8V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0051Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 170A
- DS Breakdown Voltage-Min :
- 60V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 5070pF @ 30V
- Power Dissipation-Max :
- 250W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 57nC @ 10V
- Series :
- NexFET™
- Base Part Number :
- CSD18542
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Width :
- 8.41mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 4.83mm
- Length :
- 10.18mm
- Feedback Cap-Max (Crss) :
- 14 pF
- Reach Compliance Code :
- not_compliant
- Datasheets
- CSD18542KTTT

N-Channel Tape & Reel (TR) 4m Ω @ 100A, 10V ±20V 5070pF @ 30V 57nC @ 10V 60V TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
CSD18542KTTT Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 281 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5070pF @ 30V.This device has a continuous drain current (ID) of [170A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 200A.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.8V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
CSD18542KTTT Features
the avalanche energy rating (Eas) is 281 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 400A.
a threshold voltage of 1.8V
a 60V drain to source voltage (Vdss)
CSD18542KTTT Applications
There are a lot of Texas Instruments
CSD18542KTTT applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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