CSD18542KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

3

Power Dissipation-Max :

250W Tc

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5070pF @ 30V

Peak Reflow Temperature (Cel) :

260

Width :

8.41mm

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Base Part Number :

CSD18542

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

281 mJ

Transistor Application :

SWITCHING

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Length :

10.18mm

Drain-source On Resistance-Max :

0.0051Ohm

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

4m Ω @ 100A, 10V

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

14 pF

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Thickness :

4.44mm

Pbfree Code :

yes

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

8 Weeks

Series :

NexFET™

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Height :

4.83mm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

200A