CSD18540Q5BT
- Mfr.Part #
- CSD18540Q5BT
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A 8VSON
- Stock
- 341,093
- In Stock :
- 341,093
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 29A
- Power Dissipation-Max :
- 3.1W Ta 195W Tc
- Avalanche Energy Rating (Eas) :
- 320 mJ
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Lead Free :
- Contains Lead
- Rise Time :
- 9ns
- Turn On Delay Time :
- 6 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4230pF @ 30V
- Peak Reflow Temperature (Cel) :
- 260
- Pulsed Drain Current-Max (IDM) :
- 400A
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 3 ns
- ECCN Code :
- EAR99
- Number of Terminations :
- 5
- Factory Lead Time :
- 6 Weeks
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Length :
- 5mm
- Drain to Source Voltage (Vdss) :
- 60V
- Height :
- 1.05mm
- Turn-Off Delay Time :
- 20 ns
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.0033Ohm
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 28A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Gold
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Thickness :
- 950μm
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- CSD18540
- Case Connection :
- DRAIN
- Package / Case :
- 8-PowerTDFN
- DS Breakdown Voltage-Min :
- 60V
- Terminal Form :
- NO LEAD
- REACH SVHC :
- No SVHC
- Series :
- NexFET™
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 3.8W
- Threshold Voltage :
- 1.9V
- Reach Compliance Code :
- not_compliant
- Number of Channels :
- 1
- Max Junction Temperature (Tj) :
- 175°C
- Weight :
- 24.012046mg
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Width :
- 6mm
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Datasheets
- CSD18540Q5BT

N-Channel Tape & Reel (TR) 2.2m Ω @ 28A, 10V ±20V 4230pF @ 30V 53nC @ 10V 60V 8-PowerTDFN
CSD18540Q5BT Description
CSD18540Q5BT is a NexFETTM N-channel Power MOSFET designed to minimize losses in power conversion applications. It can be used in DC-to-DC conversion and secondary side synchronous rectifiers, as well as primary side switches on isolated converters.
CSD18540Q5BT Features
-
RoHS Compliant
-
Halogen Free
-
Ultra-Low Qg and Qgd
-
Low-Thermal Resistance
-
Avalanche Rated
-
Lead-Free Terminal Plating
-
SON 5-mm × 6-mm Plastic Package
CSD18540Q5BT Applications
-
DC-DC Conversion
-
Secondary Side Synchronous Rectifier
-
Isolated Converter Primary Side Switch
-
Power Management
-
Motor Drive & Control
-
Industrial
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