CSD18537NKCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Nominal Vgs :

3 V

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Height :

4.7mm

Length :

10.16mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Contact Plating :

Copper, Tin

ECCN Code :

EAR99

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.5V @ 250µA

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1480pF @ 30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

3.2ns

Packaging :

Tube

Base Part Number :

CSD18537

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Feedback Cap-Max (Crss) :

5.2 pF

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

55 mJ

Turn-Off Delay Time :

12.6 ns

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

14m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Power Dissipation-Max :

94W Tc

Turn On Delay Time :

4.5 ns

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Width :

8.7mm

Element Configuration :

Single

Package / Case :

TO-220-3

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Fall Time (Typ) :

3.9 ns

Continuous Drain Current (ID) :

54A

Thickness :

4.58mm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Power Dissipation :

79W

Case Connection :

DRAIN

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole