CSD18536KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Series :

NexFET™

Thickness :

4.44mm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

349A

Base Part Number :

CSD18536

Lead Free :

Contains Lead

Width :

8.41mm

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Avalanche Energy Rating (Eas) :

819 mJ

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Length :

10.18mm

FET Type :

N-Channel

Vgs (Max) :

±20V

Factory Lead Time :

6 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain-source On Resistance-Max :

0.0022Ohm

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

400A

Height :

4.83mm

Number of Terminations :

3

Number of Pins :

3

Power Dissipation-Max :

375W Tc

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

yes

Mount :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

11430pF @ 30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1.8V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

200A

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Feedback Cap-Max (Crss) :

51 pF

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

200A Ta 349A Tc

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V