CSD18536KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 10V

Turn On Delay Time :

8 ns

Lead Free :

Contains Lead

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Pins :

3

Avalanche Energy Rating (Eas) :

819 mJ

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

CSD18536

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Thickness :

4.58mm

Continuous Drain Current (ID) :

200A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pulsed Drain Current-Max (IDM) :

400A

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

FET Type :

N-Channel

Pin Count :

3

Drain-source On Resistance-Max :

0.0022Ohm

Height :

4.7mm

Contact Plating :

Copper, Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

375W Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Series :

NexFET™

Fall Time (Typ) :

12 ns

Mounting Type :

Through Hole

Element Configuration :

Single

Package / Case :

TO-220-3

Rise Time :

17ns

Feedback Cap-Max (Crss) :

51 pF

Length :

10.16mm

Mount :

Through Hole

Width :

8.7mm

Turn-Off Delay Time :

23 ns

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Number of Terminations :

3

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

11430pF @ 30V