CSD18535KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

CSD18535

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Pbfree Code :

yes

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

200A Ta 279A Tc

Peak Reflow Temperature (Cel) :

260

Width :

8.41mm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Additional Feature :

AVALANCHE RATED

Thickness :

4.44mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

6620pF @ 30V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Series :

NexFET™

Avalanche Energy Rating (Eas) :

616 mJ

Power Dissipation-Max :

300W Tc

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Mount :

Surface Mount

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

Threshold Voltage :

1.9V

Length :

10.18mm

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

Element Configuration :

Single

Number of Elements :

1

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Number of Pins :

3

Transistor Element Material :

SILICON

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

279A

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0029Ohm

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

200A

Factory Lead Time :

6 Weeks

Pulsed Drain Current-Max (IDM) :

400A

Transistor Application :

SWITCHING