CSD18535KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Packaging :

Tube

Fall Time (Typ) :

3 ns

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0029Ohm

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-220-3

Power Dissipation-Max :

300W Tc

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Pbfree Code :

yes

Thickness :

4.58mm

Width :

8.7mm

Avalanche Energy Rating (Eas) :

616 mJ

Turn-Off Delay Time :

19 ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

200A

Element Configuration :

Single

Pin Count :

3

Factory Lead Time :

12 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Through Hole

Rise Time :

3ns

Input Capacitance (Ciss) (Max) @ Vds :

6620pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

FET Type :

N-Channel

Case Connection :

DRAIN

Lead Free :

Contains Lead

Height :

4.7mm

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

9 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Base Part Number :

CSD18535

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Contact Plating :

Copper, Tin

Length :

10.16mm

Transistor Element Material :

SILICON

Series :

NexFET™

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

400A