CSD18534Q5AT
- Mfr.Part #
- CSD18534Q5AT
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 60V 50A 8VSON
- Stock
- 273,194
- In Stock :
- 273,194
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- NO LEAD
- Turn-Off Delay Time :
- 15 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 50A Ta
- DS Breakdown Voltage-Min :
- 60V
- Case Connection :
- DRAIN
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 60V
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 11.1nC @ 4.5V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 3.1W Ta 77W Tc
- Rise Time :
- 5.5ns
- Package / Case :
- 8-PowerTDFN
- Number of Terminations :
- 5
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 9.8m Ω @ 14A, 10V
- Continuous Drain Current (ID) :
- 69A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 30V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Series :
- NexFET™
- Pbfree Code :
- yes
- Thickness :
- 1mm
- Number of Pins :
- 8
- Fall Time (Typ) :
- 2 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 229A
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Drain Current-Max (Abs) (ID) :
- 13A
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 5.2 ns
- Feedback Cap-Max (Crss) :
- 6.5 pF
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0124Ohm
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Base Part Number :
- CSD18534
- Length :
- 4.9mm
- Width :
- 6mm
- Mount :
- Surface Mount
- Datasheets
- CSD18534Q5AT

N-Channel Tape & Reel (TR) 9.8m Ω @ 14A, 10V ±20V 1770pF @ 30V 11.1nC @ 4.5V 60V 8-PowerTDFN
CSD18534Q5AT Description
Utilize this Texas Instruments CSD18534Q5AT power MOSFET to create a powerful common source amplifier. 3100 mW is the most power it can dissipate. For efficient mounting and secure delivery, this component will be packaged in tape and reel. The enhancement mode is used by this N channel MOSFET transistor. Nexfet technology was used to create this gadget. The operating temperature range for this MOSFET transistor is between -55 ??C and 150 ??C.
CSD18534Q5AT Features
-
Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb Free Terminal Plating
-
SON 5 mm ?á 6 mm Plastic Package
CSD18534Q5AT Applications
-
DC-DC Conversion
-
Secondary Side Synchronous Rectifier
-
Isolated Converter Primary Side Switch
-
Motor Control
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