CSD18533Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

2 ns

Input Capacitance (Ciss) (Max) @ Vds :

2750pF @ 30V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

6 Weeks

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Turn-Off Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 18A, 10V

Power Dissipation-Max :

3.2W Ta 116W Tc

Threshold Voltage :

1.9V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5.2 ns

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

1.9 V

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

8

Height :

1.1mm

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

9 pF

Case Connection :

DRAIN

Rise Time :

5.5ns

REACH SVHC :

No SVHC

Number of Elements :

1

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Width :

6mm

Base Part Number :

CSD18533

Continuous Drain Current (ID) :

100A

Number of Terminations :

5

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Series :

NexFET™

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

17A Ta 100A Tc

Thickness :

1mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Element Configuration :

Single

Package / Case :

8-PowerTDFN

Length :

4.9mm

DS Breakdown Voltage-Min :

60V

Power Dissipation :

3.2W

Operating Temperature :

-55°C~150°C TJ