CSD18533Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Lead Free :

Contains Lead

Fall Time (Typ) :

2 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Number of Terminations :

5

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

3.2W Ta 116W Tc

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

1.9 V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Mounting Type :

Surface Mount

Turn-Off Delay Time :

15 ns

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

100A

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

REACH SVHC :

No SVHC

Threshold Voltage :

1.9V

Power Dissipation :

3.2W

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Thickness :

1mm

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 18A, 10V

Turn On Delay Time :

5.2 ns

Height :

1.1mm

Input Capacitance (Ciss) (Max) @ Vds :

2750pF @ 30V

Rise Time :

5.5ns

Width :

6mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.3V @ 250μA

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Feedback Cap-Max (Crss) :

9 pF

Base Part Number :

CSD18533

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

17A Ta 100A Tc

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Length :

4.9mm

FET Type :

N-Channel