CSD18533KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

72A Ta 100A Tc

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.009Ohm

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Length :

10.16mm

REACH SVHC :

No SVHC

Number of Elements :

1

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Thickness :

4.58mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

8.7mm

Turn-Off Delay Time :

13 ns

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

Number of Pins :

3

Continuous Drain Current (ID) :

100A

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3025pF @ 30V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Turn On Delay Time :

5.7 ns

JESD-609 Code :

e3

Nominal Vgs :

1.9 V

Rise Time :

4.8ns

Height :

4.7mm

Base Part Number :

CSD18533

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Threshold Voltage :

1.9V

Power Dissipation-Max :

192W Tc

Fall Time (Typ) :

3.2 ns

Power Dissipation :

160W

Series :

NexFET™

Packaging :

Tube

Lead Free :

Lead Free

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Number of Terminations :

3