CSD18533KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.7mm

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

6 Weeks

Fall Time (Typ) :

3.2 ns

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Pins :

3

Mount :

Through Hole

Base Part Number :

CSD18533

Input Capacitance (Ciss) (Max) @ Vds :

3025pF @ 30V

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

160W

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

REACH SVHC :

No SVHC

Turn-Off Delay Time :

13 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

72A Ta 100A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Mounting Type :

Through Hole

Power Dissipation-Max :

192W Tc

Rise Time :

4.8ns

Case Connection :

DRAIN

Number of Terminations :

3

Width :

8.7mm

Packaging :

Tube

Thickness :

4.58mm

Turn On Delay Time :

5.7 ns

Nominal Vgs :

1.9 V

Lead Free :

Lead Free

Threshold Voltage :

1.9V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

10.16mm

Reach Compliance Code :

not_compliant

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

100A

Series :

NexFET™

Drain-source On Resistance-Max :

0.009Ohm